Mfg Part Number: NEO2135(D | Alternate P/N: NEO2135D | NSN : 5961-01-434-0312 |
NIIN : 014340312 | CAGE Code : 62104 | Manufacturer: California Eastern Laboratories Inc |
Item Name : Transistor | FSC : 5961 Semiconductor Devices and Associated Hardware |
Thank you for your interest in NEO2135(D NSN Part and our catalog of NSN parts on Electronics 3Sixty. The NEO2135(D NSN Part with the NSN 5961-01-434-0312 is currently available for purchase through our website today. NEO2135(D part was manufactured by California Eastern Laboratories Inc and is listed with the description of Transistor. If you are interested in this part, you can request a quote at any time using our Instant RFQ service. When completing the RFQ form, please include as much information as possible, including quantity needed, target price and expected delivery date, so that our team members can formulate a quote that represents your individual needs.
At Electronics 3Sixty, we list NSN parts alongside other relevant information, such as CAGE Code, for our customers' benefit. For example, the NSN component 5961-01-434-0312 is listed with the CAGE Code 62104, which is assigned to California Eastern Laboratories Inc. When purchasing federal supply items or any other parts through Electronics 3Sixty, customers can rest assured that they receive the highest-caliber items possible. Our various quality-assurance measures and strict NO CHINA Sourcing policy allow our company to operate with AS9120B, ISO 9001:2015, and FAA AC 0056B accreditation, speaking to our steadfast commitment to such practices. Choose Electronics 3Sixty for your next project to learn why many customers rely upon us as their ongoing strategic sourcing partner
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | CERAMIC |
ABHP | OVERALL LENGTH | 0.414 INCHES MINIMUM |
ABKW | OVERALL HEIGHT | 0.071 INCHES MINIMUM |
ABMK | OVERALL WIDTH | 0.414 INCHES MINIMUM |
AGAV | END ITEM IDENTIFICATION | PACER DAWN |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
CTQX | CURRENT RATING PER CHARACTERISTIC | 70.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM |
CTRD | POWER RATING PER CHARACTERISTIC | 290.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER NANOAMPERES |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG FAHRENHEIT JUNCTION |
TTQY | TERMINAL TYPE AND QUANTITY | 4 RIBBON |
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